A simple unified analytical model for ferroelectric thin film capacitor and its applications for nonvolatile memory operation

A simple unified analytical ferroelectric model has been developed based on an effective field assumption and statistical physics, which covers ferroelectric hysteresis, switching, and phase transitions including first and second order phase transitions as well as Curie-Weiss law. The model parameters may be extracted from measured data using commercial customizable optimization tools such as SmartSpice´s Optimizer. The model can be used for modeling, simulation and statistical process control for ferroelectric nonvolatile memory design and fabrication