DocumentCode
3139749
Title
A temperature and voltage measurement cell for VLSI circuits
Author
Quénot, Georges M. ; Paris, Nicolas ; Zavidovique, Bertrand
Author_Institution
Lab. Syst. de Perception, DGA/Etablissement Tech. Central de l´´Armement, Arcueil, France
fYear
1991
fDate
27-31 May 1991
Firstpage
334
Lastpage
338
Abstract
A temperature and voltage measurement cell (TVM cell) for VLSI circuits has been developed. It requires less than 1 mm/sup 2/ of core area (for a 2 mu m CMOS technology) and only 4 I/O pins. It can be integrated into any GMOS VLSI circuit, permitting the measurement of the circuit die temperature (T) and its core power supply voltage (V) while the chip is operated normally in a system. It achieves simultaneously an accuracy better than 50 mV and 3 degrees C. Output values are averages of the parameter values during a 1 ms period.<>
Keywords
CMOS integrated circuits; VLSI; integrated circuit testing; temperature measurement; voltage measurement; 2 micron; CMOS technology; VLSI circuits; circuit die temperature; core power supply voltage; voltage measurement cell; CMOS technology; Integrated circuit measurements; Integrated circuit technology; Pins; Power measurement; Power supplies; Semiconductor device measurement; Temperature measurement; Very large scale integration; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Euro ASIC '91
Conference_Location
Paris, France
Print_ISBN
0-8186-2185-0
Type
conf
DOI
10.1109/EUASIC.1991.212842
Filename
212842
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