Title :
A temperature and voltage measurement cell for VLSI circuits
Author :
Quénot, Georges M. ; Paris, Nicolas ; Zavidovique, Bertrand
Author_Institution :
Lab. Syst. de Perception, DGA/Etablissement Tech. Central de l´´Armement, Arcueil, France
Abstract :
A temperature and voltage measurement cell (TVM cell) for VLSI circuits has been developed. It requires less than 1 mm/sup 2/ of core area (for a 2 mu m CMOS technology) and only 4 I/O pins. It can be integrated into any GMOS VLSI circuit, permitting the measurement of the circuit die temperature (T) and its core power supply voltage (V) while the chip is operated normally in a system. It achieves simultaneously an accuracy better than 50 mV and 3 degrees C. Output values are averages of the parameter values during a 1 ms period.<>
Keywords :
CMOS integrated circuits; VLSI; integrated circuit testing; temperature measurement; voltage measurement; 2 micron; CMOS technology; VLSI circuits; circuit die temperature; core power supply voltage; voltage measurement cell; CMOS technology; Integrated circuit measurements; Integrated circuit technology; Pins; Power measurement; Power supplies; Semiconductor device measurement; Temperature measurement; Very large scale integration; Voltage measurement;
Conference_Titel :
Euro ASIC '91
Conference_Location :
Paris, France
Print_ISBN :
0-8186-2185-0
DOI :
10.1109/EUASIC.1991.212842
