Interband transition in surface delta-doped GaAs studied by photo-reflectance

Author

Lu, W. ; Liu, X.Q. ; Chen, X.S. ; Shi, G.L. ; Qiao, Y.M. ; Shen, S.C. ; Fu, Y. ; Willander, M.

Author_Institution

Nat. Lab. for Infrared Phys., Acad. Sinica, Shanghai, China

fYear

1999

fDate

1999

Firstpage

509

Lastpage

512

Abstract

In this paper we present the study on the surface doping behavior of Si on the GaAs (100) surface by using modulated photo-reflection spectroscopy technique at room temperature. With the envelope wave function model combined with experimental interband transition energy in the delta-doping induced potential the highest carrier concentration in the surface doping GaAs sample is obtained around 1×10¹⁴ cm^-2

Keywords

III-V semiconductors; carrier density; gallium arsenide; impurity states; ion implantation; modulation spectra; photoreflectance; semiconductor doping; silicon; surface composition; surface states; GaAs:Si; envelope wave function model; highest carrier concentration; interband transition; interband transition energy; modulated photo-reflection spectroscopy; surface delta-doped GaAs; surface doping behavior; Gallium arsenide; Laser beams; Molecular beam epitaxial growth; Physics; Pollution measurement; Semiconductor device doping; Semiconductor devices; Spectroscopy; Substrates; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on

Conference_Location

Perth, WA

Print_ISBN

0-7803-4513-4

Type

conf

DOI

10.1109/COMMAD.1998.791702

Filename

791702