Title :
Interband transition in surface delta-doped GaAs studied by photo-reflectance
Author :
Lu, W. ; Liu, X.Q. ; Chen, X.S. ; Shi, G.L. ; Qiao, Y.M. ; Shen, S.C. ; Fu, Y. ; Willander, M.
Author_Institution :
Nat. Lab. for Infrared Phys., Acad. Sinica, Shanghai, China
Abstract :
In this paper we present the study on the surface doping behavior of Si on the GaAs (100) surface by using modulated photo-reflection spectroscopy technique at room temperature. With the envelope wave function model combined with experimental interband transition energy in the delta-doping induced potential the highest carrier concentration in the surface doping GaAs sample is obtained around 1×1014 cm-2
Keywords :
III-V semiconductors; carrier density; gallium arsenide; impurity states; ion implantation; modulation spectra; photoreflectance; semiconductor doping; silicon; surface composition; surface states; GaAs:Si; envelope wave function model; highest carrier concentration; interband transition; interband transition energy; modulated photo-reflection spectroscopy; surface delta-doped GaAs; surface doping behavior; Gallium arsenide; Laser beams; Molecular beam epitaxial growth; Physics; Pollution measurement; Semiconductor device doping; Semiconductor devices; Spectroscopy; Substrates; Temperature measurement;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791702
