Title :
Application of selective implantation induced intermixing on V-grooved AlGaAs/GaAs coupled quantum wire
Author :
Liu, Xingquan ; Lu, Wei ; Chen, Xiaoshuang ; Shen, S.C. ; Tan, H.H. ; Yuan, S. ; Jagadish, C. ; Johnston, M.B. ; Dao, L.V. ; Gal, M. ; Zou, J. ; Cockayne, D.J.H.
Author_Institution :
Nat. Lab. for Infrared Phys., Acad. Sinica, Shanghai, China
Abstract :
Selective implantation induced intermixing was used to separate the spectral response of quantum wire from that of the quantum wells in V-grooved quantum wire structure. Photoluminescence (PL) measurement was accomplished to show the separation of the spectral response
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; interface states; ion beam mixing; ion implantation; photoluminescence; semiconductor doping; semiconductor quantum wires; surface diffusion; AlGaAs-GaAs; V-grooved AlGaAs/GaAs coupled quantum wire; photoluminescence; selective implantation induced intermixing; spectral response; Australia; Fabrication; Gallium arsenide; Laboratories; Microscopy; Photoluminescence; Physics; Rapid thermal annealing; Temperature measurement; Wire;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791703
