DocumentCode
3139778
Title
Application of selective implantation induced intermixing on V-grooved AlGaAs/GaAs coupled quantum wire
Author
Liu, Xingquan ; Lu, Wei ; Chen, Xiaoshuang ; Shen, S.C. ; Tan, H.H. ; Yuan, S. ; Jagadish, C. ; Johnston, M.B. ; Dao, L.V. ; Gal, M. ; Zou, J. ; Cockayne, D.J.H.
Author_Institution
Nat. Lab. for Infrared Phys., Acad. Sinica, Shanghai, China
fYear
1999
fDate
1999
Firstpage
513
Lastpage
515
Abstract
Selective implantation induced intermixing was used to separate the spectral response of quantum wire from that of the quantum wells in V-grooved quantum wire structure. Photoluminescence (PL) measurement was accomplished to show the separation of the spectral response
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; interface states; ion beam mixing; ion implantation; photoluminescence; semiconductor doping; semiconductor quantum wires; surface diffusion; AlGaAs-GaAs; V-grooved AlGaAs/GaAs coupled quantum wire; photoluminescence; selective implantation induced intermixing; spectral response; Australia; Fabrication; Gallium arsenide; Laboratories; Microscopy; Photoluminescence; Physics; Rapid thermal annealing; Temperature measurement; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location
Perth, WA
Print_ISBN
0-7803-4513-4
Type
conf
DOI
10.1109/COMMAD.1998.791703
Filename
791703
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