DocumentCode :
3139806
Title :
Hidden but important parameters in Ga0.5In0.5P cell growth
Author :
Kurtz, Sarah R. ; Olson, J.M. ; Bertness, K.A. ; Sinha, K. ; McMahon, B. ; Asher, S.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
fYear :
1996
fDate :
13-17 May 1996
Firstpage :
37
Lastpage :
42
Abstract :
Despite their best intentions, authors often omit from publications many important technical details. These omissions can lead to contradictions in the literature and inhibit researchers´ abilities to duplicate published results. Here, the authors explore “hidden” parameters that are usually not reported, either because they are unknown (e.g., impurity levels) or because they are considered to be of little importance. Specifically, they focus on the effects-and how to reduce the effects-of growth parameters in nearby layers (diffusion), impurities (oxygen) and the cool-down atmosphere (hydrogen passivation)
Keywords :
diffusion; gallium compounds; indium compounds; passivation; semiconductor device testing; semiconductor doping; semiconductor growth; semiconductor thin films; solar cells; Ga0.5In0.5P; Ga0.5In0.5P solar cells; cool-down atmosphere; diffusion; growth parameters; hidden parameters; hydrogen passivation; impurities; impurity levels; semiconductor; technical details; Current measurement; Doping; Electrical resistance measurement; Etching; Government; Indium phosphide; Protection; Reflection; Transmission line measurements; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
ISSN :
0160-8371
Print_ISBN :
0-7803-3166-4
Type :
conf
DOI :
10.1109/PVSC.1996.563941
Filename :
563941
Link To Document :
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