DocumentCode
3139819
Title
Metastable states and their resonant electron-phonon interaction of hydrogen-like donors in GaAs
Author
Shen, S.C. ; Chen, Zhanghai ; Chen, Zhonghui
Author_Institution
Nat. Lab. for Infrared Phys., Acad. Sinica, Shanghai, China
fYear
1999
fDate
1999
Firstpage
522
Lastpage
525
Abstract
The FTIR photoconductivity measurements and theoretical comparison of the magnetic field induced metastable states of the hydrogen-like donors in GaAs are reported in this paper. The transitions from the ground bound Is state to the high-lying metastable states of Si donors are observed and identified. A simplified trial wave-function is applied to these high-lying metastable states and the variational calculations are in good agreement with our experimental data. The electron-phonon interaction related with the metastable states are investigated. Integrated energy spectra consist of the resonant magneto-polaron branches and the bound phonon branches, which corresponding to the multiple phonon process, are obtained for the first time
Keywords
Fourier transform spectra; III-V semiconductors; electron-phonon interactions; gallium arsenide; ground states; impurity states; infrared spectra; magnetic polarons; metastable states; photoconductivity; silicon; FTIR photoconductivity; GaAs; GaAs:Si; Si donors; bound phonon branches; hydrogen-like donors; metastable states; resonant electron-phonon interaction; resonant magneto-polaron branches; trial wave-function; variational calculations; Charge carrier processes; Gallium arsenide; Hydrogen; Magnetic field measurement; Magnetic fields; Magnetic properties; Magnetic resonance; Metastasis; Phonons; Physics;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location
Perth, WA
Print_ISBN
0-7803-4513-4
Type
conf
DOI
10.1109/COMMAD.1998.791708
Filename
791708
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