Title :
Metastable states and their resonant electron-phonon interaction of hydrogen-like donors in GaAs
Author :
Shen, S.C. ; Chen, Zhanghai ; Chen, Zhonghui
Author_Institution :
Nat. Lab. for Infrared Phys., Acad. Sinica, Shanghai, China
Abstract :
The FTIR photoconductivity measurements and theoretical comparison of the magnetic field induced metastable states of the hydrogen-like donors in GaAs are reported in this paper. The transitions from the ground bound Is state to the high-lying metastable states of Si donors are observed and identified. A simplified trial wave-function is applied to these high-lying metastable states and the variational calculations are in good agreement with our experimental data. The electron-phonon interaction related with the metastable states are investigated. Integrated energy spectra consist of the resonant magneto-polaron branches and the bound phonon branches, which corresponding to the multiple phonon process, are obtained for the first time
Keywords :
Fourier transform spectra; III-V semiconductors; electron-phonon interactions; gallium arsenide; ground states; impurity states; infrared spectra; magnetic polarons; metastable states; photoconductivity; silicon; FTIR photoconductivity; GaAs; GaAs:Si; Si donors; bound phonon branches; hydrogen-like donors; metastable states; resonant electron-phonon interaction; resonant magneto-polaron branches; trial wave-function; variational calculations; Charge carrier processes; Gallium arsenide; Hydrogen; Magnetic field measurement; Magnetic fields; Magnetic properties; Magnetic resonance; Metastasis; Phonons; Physics;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791708