DocumentCode
3139834
Title
Accurate modelling of absorption and refractive index in a GaAs/AlGaAs quantum well
Author
Nott, G.J. ; Goldys, E.M.
Author_Institution
Semicond. Sci. & Technol. Lab., Macquarie Univ., North Ryde, NSW, Australia
fYear
1999
fDate
1999
Firstpage
526
Lastpage
529
Abstract
Using the real and imaginary dielectric constants of a GaAs/AlGaAs quantum well, both the absorption and refractive index of the structure were calculated. The imaginary dielectric constant was obtained by finding the contribution from each critical point in the density of states. The Kramers-Kronig transform of each contribution gave the corresponding real dielectric constant and these contributions were summed to give the material´s total real dielectric constant. Absorption was found from the imaginary dielectric constant and fitted to experimental spectra. All contributions from confined and continuum transitions were considered in the subsequent calculation of refractive index with the resulting spectrum being comparable to published data
Keywords
III-V semiconductors; Kramers-Kronig relations; aluminium compounds; gallium arsenide; permittivity; refractive index; semiconductor quantum wells; GaAs-AlGaAs; GaAs/AlGaAs quantum well; Kramers-Kronig transform; absorption; dielectric constants; refractive index; Absorption; Charge carrier processes; Detectors; Dielectric constant; Effective mass; Excitons; Fabry-Perot; Gallium arsenide; Laboratories; Refractive index;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location
Perth, WA
Print_ISBN
0-7803-4513-4
Type
conf
DOI
10.1109/COMMAD.1998.791709
Filename
791709
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