• DocumentCode
    3139834
  • Title

    Accurate modelling of absorption and refractive index in a GaAs/AlGaAs quantum well

  • Author

    Nott, G.J. ; Goldys, E.M.

  • Author_Institution
    Semicond. Sci. & Technol. Lab., Macquarie Univ., North Ryde, NSW, Australia
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    526
  • Lastpage
    529
  • Abstract
    Using the real and imaginary dielectric constants of a GaAs/AlGaAs quantum well, both the absorption and refractive index of the structure were calculated. The imaginary dielectric constant was obtained by finding the contribution from each critical point in the density of states. The Kramers-Kronig transform of each contribution gave the corresponding real dielectric constant and these contributions were summed to give the material´s total real dielectric constant. Absorption was found from the imaginary dielectric constant and fitted to experimental spectra. All contributions from confined and continuum transitions were considered in the subsequent calculation of refractive index with the resulting spectrum being comparable to published data
  • Keywords
    III-V semiconductors; Kramers-Kronig relations; aluminium compounds; gallium arsenide; permittivity; refractive index; semiconductor quantum wells; GaAs-AlGaAs; GaAs/AlGaAs quantum well; Kramers-Kronig transform; absorption; dielectric constants; refractive index; Absorption; Charge carrier processes; Detectors; Dielectric constant; Effective mass; Excitons; Fabry-Perot; Gallium arsenide; Laboratories; Refractive index;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
  • Conference_Location
    Perth, WA
  • Print_ISBN
    0-7803-4513-4
  • Type

    conf

  • DOI
    10.1109/COMMAD.1998.791709
  • Filename
    791709