A super low power MICS band receiver front-end down converter on 65 nm CMOS

Author

Yang, J. ; Fu, M. ; Skafidas, E. ; Tran, N. ; Bai, S. ; Mareels, I. ; Ng, D.C. ; Halpern, M.

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Melbourne, Melbourne, VIC, Australia

Volume

4

fYear

2010

fDate

16-18 Oct. 2010

Firstpage

1412

Lastpage

1415

Abstract

This paper presents a super low power MICS band receiver front-end down converter on 65 nm CMOS for implantable biomedical devices. This down converter, including a LNA and a quadrature mixer, only consumes 500 μA DC current under 1 V supply. With a small LO swing of 300 mV, it provides a voltage conversion gain of 35 dB and a noise figure of 7.4 dB, while a -20 dBm IIP3 is obtained. In order to achieve super low power, current-reuse structure is adopted and all transistors are operated in deep sub-threshold region. Circuits level issues and techniques are also discussed.

Keywords

CMOS integrated circuits; MOSFET; biomedical communication; low noise amplifiers; prosthetics; CMOS; DC current; LNA; current-reuse structure; implantable biomedical devices; noise figure; quadrature mixer; super low power; super low power MICS band receiver front-end down converter; voltage conversion gain; CMOS integrated circuits; Converters; Gain; Microwave integrated circuits; Noise figure; Receivers; Transistors; MICS band; down converter; implantable biomedical device; sub-threshold; super low power;

fLanguage

English

Publisher

ieee

Conference_Titel

Biomedical Engineering and Informatics (BMEI), 2010 3rd International Conference on

Conference_Location

Yantai

Print_ISBN

978-1-4244-6495-1

Type

conf

DOI

10.1109/BMEI.2010.5639412

Filename

5639412