A dynamic depletion SOI MOSFET model for SPICE

Author

Sinitsky, D. ; Fung, S. ; Tang, S. ; Pin Su ; Mansun Chan ; Ping Ko ; Chenming Hu

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1998

fDate

9-11 June 1998

Firstpage

114

Lastpage

115

Abstract

We show, using measurements, that a transition between partial and full depletion (PD and FD) modes of operation as terminal voltages vary with time (dynamic depletion) has a strong impact on thin film SOI MOSFET characteristics. A model incorporating this effect is presented. It includes floating body, backgate, and body contact nodes, as well as impact ionization, GIDL, diode leakage and parasitic bipolar currents. Self-heating is modeled by an auxiliary R/sub th/C/sub th/ circuit. The model uses a single smooth equation over all operating regimes for each current and charge and is fully scalable with T/sub si/, T/sub box/, T/sub ox/, W, and L.

Keywords

MOSFET; SPICE; impact ionisation; leakage currents; semiconductor device measurement; semiconductor device models; silicon-on-insulator; GIDL; SOI MOSFET model; SPICE; backgate nodes; body contact nodes; diode leakage; dynamic depletion; floating body nodes; impact ionization; operating regimes; parasitic bipolar currents; Differential equations; Diodes; MOSFET circuits; Poisson equations; SPICE; Switches; Thin film circuits; Time measurement; Voltage; Water;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-4770-6

Type

conf

DOI

10.1109/VLSIT.1998.689222

Filename

689222