Title :
122 GHz ISM-band transceiver concept and silicon ICs for low-cost receiver in SiGe BiCMOS
Author :
Schmalz, K. ; Winkler, W. ; Borngraber, Johannes ; Debski, W. ; Heinemann, B. ; Scheytt, J.C.
Author_Institution :
IHP GmbH, Frankfurt (Oder), Germany
Abstract :
A subharmonic transceiver for sensing and imaging applications in the 122 GHz ISM band has been proposed. The receiver consists of a single-ended LNA, a push-push VCO with 1/32 divider, a polyphase filter, and a subharmonic mixer. The receiver is fabricated in SiGe:C BiCMOS technology with fT/fmax of 255GHz/315GHz. Its differential down-conversion gain is 31 dB at 122 GHz, and the corresponding noise figure is 11 dB. The 3-dB bandwidth reaches from 121 GHz to 124 GHz. The input 1-dB compression point is at -44 dBm. The receiver consumes 113 mA at a supply voltage of 3.2 V.
Keywords :
CMOS integrated circuits; germanium compounds; silicon compounds; transceivers; transcoding; BiCMOS technology; ISM-band transceiver; SiGe; bandwidth 121 GHz to 124 GHz; frequency 122 GHz; frequency 255 GHz; frequency 315 GHz; gain 31 dB; low-cost receiver; polyphase filter; subharmonic transceiver; Bandwidth; BiCMOS integrated circuits; Filters; Gain; Germanium silicon alloys; Noise figure; Silicon germanium; Transceivers; Voltage; Voltage-controlled oscillators; 122 GHz; LNA; SiGe technology; VCO; millimeter-wave circuits; sub-harmonic receiver;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5517447
