DocumentCode :
3140327
Title :
Thin film GaAs solar cells on glass substrates by epitaxial liftoff
Author :
Lee, X.Y. ; Verma, Ashish K. ; Wu, Charles Q. ; Goertemiller, Mark ; Yablonovitch, Eli ; Eldredge, Jack ; Lillington, David
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fYear :
1996
fDate :
13-17 May 1996
Firstpage :
53
Lastpage :
55
Abstract :
In this work, the authors describe the fabrication and operating characteristics of GaAs/AlGaAs thin-film solar cells using the epitaxial liftoff (ELO) technique. This technique allows the transfer of these solar cells onto nonabsorbing glass substrates, and makes possible light-trapping operation. The enhanced performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions
Keywords :
aluminium compounds; epitaxial growth; gallium arsenide; gallium compounds; semiconductor device testing; semiconductor epitaxial layers; semiconductor growth; semiconductor thin films; solar cells; substrates; GaAs-AlGaAs; GaAs/AlGaAs thin-film solar cells; dark conditions; electrical measurements; epitaxial liftoff; fabrication; illuminated conditions; light-trapping operation; nonabsorbing glass substrates; operating characteristics; performance enhancement; semiconductor; Electric variables measurement; Etching; Fabrication; Gallium arsenide; Glass; Photovoltaic cells; Space technology; Substrates; Transistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
ISSN :
0160-8371
Print_ISBN :
0-7803-3166-4
Type :
conf
DOI :
10.1109/PVSC.1996.563944
Filename :
563944
Link To Document :
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