DocumentCode :
3140404
Title :
A highly efficient 1-GHz, 15-W power amplifier design based on a 50-V LDMOS transistor
Author :
Singerl, Peter ; Fager, Christian ; Wang, Ziming ; Schuberth, Christian ; Dielacher, Franz
Author_Institution :
Infineon Technol. Austria AG, Villach, Austria
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1102
Lastpage :
1105
Abstract :
We present a 15-W, 1-GHz harmonically tuned power amplifier (PA) with a power added efficiency (PAE) of 75%. The PA design is based on a packaged 50-V Si-LDMOS engineering sample. The PAE is maximized by an appropriate tuning of the fundamental and second harmonics, while the higher harmonics are shortened by the parasitic drain-source capacitance. The PA design is based on a simplified transistor model which is optimized for harmonically tuned PAs. The model parameters are extracted from IV- and S-parameter measurements of the packaged LDMOS device. A good agreement between the simulation and measurement results shows the accuracy of the modeling and PA design procedure.
Keywords :
MOS integrated circuits; UHF power amplifiers; elemental semiconductors; microwave integrated circuits; silicon; transistor circuits; LDMOS transistor; S-parameter measurements; Si; frequency 1 GHz; harmonically tuned power amplifier; parasitic drain-source capacitance; power 15 W; power added efficiency; second harmonics; voltage 50 V; Costs; Design optimization; Frequency; High power amplifiers; Impedance; Packaging; Parasitic capacitance; Particle measurements; Power engineering and energy; Power generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5517459
Filename :
5517459
Link To Document :
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