Title :
A fully integrated CMOS RF power amplifier with tunable matching network for GSM/EDGE dual-mode application
Author :
Kim, Heonhwan ; Yoon, Yong Soo ; Lee, Onyou ; An, Kang ; Lee, Daewoo ; Kim, Wonhee ; Lee, Chi-Kwan ; Laskar, J.
Author_Institution :
Georgia Institute of Technology, Atlanta, United States
Abstract :
A fully integrated power amplifier operating at switching and linear mode is implemented using 0.18-um CMOS technology. To maximize performance for both operation modes, the fundamental load impedances are optimized with a variable capacitor for GSM and EDGE application. For GSM application, 32 dBm of the output power with 45 % of the drain efficiency is achieved at 1.76 GHz. With EDGE modulation signal at 1.76 GHz, error vector magnitude (EVM) has an RMS value of less than 5 % up to 27.5 dBm of the output power, and 28.1 % of modulated PAE is achieved at this power. The output spectrum is confined within the inside of mask up to 27.5 dBm of the output power.
Keywords :
CMOS technology; Capacitors; GSM; Impedance; Linearity; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Semiconductor optical amplifiers;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5517462