Title :
Large area, thin film epitaxial lift off III/V solar cells
Author :
Hageman, P.R. ; Bauhuis, G.J. ; van Geelen, A. ; van Rijsingen, P.C. ; Schermer, J.J. ; Giling, L.J.
Author_Institution :
Dept. of Exp. Solid State Phys., Nijmegen Univ., Netherlands
Abstract :
The epitaxial lift-off (ELO) method is generally considered to be very suitable for separation of a thin epilayer from its substrate. The method is very gentle and hardly effects the substrate. Here, the authors present improvements and modifications on this method resulting in successful separation of crack-free thin-films as large as 2 inch substrates. The roughness of the substrates after the ELO and the quality of epilayers after growth on used substrates was determined in order to investigate the re-use of the substrates. As a demonstration of the capability of this modified ELO procedure, a thin film GaAs/AlGaAs solar cell made by this method is presented
Keywords :
III-V semiconductors; aluminium compounds; epitaxial growth; gallium arsenide; gallium compounds; semiconductor device testing; semiconductor epitaxial layers; semiconductor growth; semiconductor thin films; solar cells; substrates; 2 in; GaAs-AlGaAs; GaAs/AlGaAs solar cells; crack-free thin-films; epilayer quality; epitaxial lift-off method; performance measurements; semiconductor; solar cell fabrication; substrate re-use; substrate roughness; Epitaxial growth; Epitaxial layers; Gallium arsenide; Photonic band gap; Photovoltaic cells; Physics; Plastic films; Solid state circuits; Substrates; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.563945
