Large area, thin film epitaxial lift off III/V solar cells

Author

Hageman, P.R. ; Bauhuis, G.J. ; van Geelen, A. ; van Rijsingen, P.C. ; Schermer, J.J. ; Giling, L.J.

Author_Institution

Dept. of Exp. Solid State Phys., Nijmegen Univ., Netherlands

fYear

1996

fDate

13-17 May 1996

Firstpage

57

Lastpage

60

Abstract

The epitaxial lift-off (ELO) method is generally considered to be very suitable for separation of a thin epilayer from its substrate. The method is very gentle and hardly effects the substrate. Here, the authors present improvements and modifications on this method resulting in successful separation of crack-free thin-films as large as 2 inch substrates. The roughness of the substrates after the ELO and the quality of epilayers after growth on used substrates was determined in order to investigate the re-use of the substrates. As a demonstration of the capability of this modified ELO procedure, a thin film GaAs/AlGaAs solar cell made by this method is presented

Keywords

III-V semiconductors; aluminium compounds; epitaxial growth; gallium arsenide; gallium compounds; semiconductor device testing; semiconductor epitaxial layers; semiconductor growth; semiconductor thin films; solar cells; substrates; 2 in; GaAs-AlGaAs; GaAs/AlGaAs solar cells; crack-free thin-films; epilayer quality; epitaxial lift-off method; performance measurements; semiconductor; solar cell fabrication; substrate re-use; substrate roughness; Epitaxial growth; Epitaxial layers; Gallium arsenide; Photonic band gap; Photovoltaic cells; Physics; Plastic films; Solid state circuits; Substrates; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.563945

Filename

563945