A highly reliable 1T/1C ferroelectric memory

Author

Dong-Jin Jung ; Sung-Yung Lee ; Bon-Jae Koo ; Yoo-Sang Hwang ; Dong-Won Shin ; Jin-Woo Lee ; Yoon-Soo Chun ; Soo-Ho Shin ; Mi-Hyang Lee ; Hong-Bae Park ; Sang-In Lee ; Kinam Kim ; Jong-Gil Lee

Author_Institution

Technol. Dev., Semicond. R&D Center, Samsung Electron. Co., Kyungki-Do, South Korea

fYear

1998

fDate

9-11 June 1998

Firstpage

122

Lastpage

123

Abstract

A reliable 1T/1C ferroelectric RAM has been successfully fabricated with 1.2 /spl mu/m conventional CMOS technology by adopting IrO/sub 2/ electrode and the Ti-rich PZT thin film. The Ti-rich PZT capacitor shows no degradation of sensing Pr after integration process. After 1/spl times/10/sup 10/ cycling, the loss of remnant polarization was less than 5%. In thermally accelerated (150/spl deg/C) test condition, more than 14 /spl mu/C/cm/sup 2/ for both data 0 and data 1 sensing Pr values are obtained even after 10 years.

Keywords

CMOS memory circuits; ferroelectric storage; integrated circuit reliability; random-access storage; 150 C; 1T/1C ferroelectric memory; CMOS technology; IrO/sub 2/; IrO/sub 2/ electrode; PZT; PZT thin film capacitor; PbZrO3TiO3; RAM; reliability; remnant polarization; thermally accelerated test; CMOS technology; Capacitors; Electrodes; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Polarization; Random access memory; Thermal degradation; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-4770-6

Type

conf

DOI

10.1109/VLSIT.1998.689225

Filename

689225