DocumentCode
3140757
Title
A smart power IC for high side driver applications
Author
Droinet, Y.
fYear
1991
fDate
27-31 May 1991
Firstpage
25
Lastpage
28
Abstract
New technologies allow the realization of power MOSFET, bipolar transistors and complex analog and digital structures on the same piece of silicon. A high side switch IC for current and high voltage applications is presented. This smart power chip is optimized to drive inductive and resistive loads in an automotive environment. The chip contains fault diagnostics to detect any failure at system level. This paper also presents the new power BICMOS technology used for this design.<>
Keywords
BiCMOS integrated circuits; automotive electronics; driver circuits; power integrated circuits; switching circuits; automotive environment; fault diagnostics; high side driver applications; inductive loads; power BICMOS technology; resistive loads; smart power IC; switch IC; Application specific integrated circuits; Automotive engineering; Bipolar transistors; Driver circuits; MOSFET circuits; Power MOSFET; Power integrated circuits; Silicon; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Euro ASIC '91
Conference_Location
Paris, France
Print_ISBN
0-8186-2185-0
Type
conf
DOI
10.1109/EUASIC.1991.212900
Filename
212900
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