DocumentCode :
3141068
Title :
60 GHz flip-chip mounted frequency doubler/PA chain MMIC with low input power and high output power
Author :
Kim, Youngmin ; Song, Sangsub ; Seo, Kwang-Seok ; Kwon, Youngwoo
Author_Institution :
Seoul Nat. Univ., Seoul
fYear :
2008
fDate :
22-24 Jan. 2008
Firstpage :
411
Lastpage :
414
Abstract :
An active single-ended 30 to 60 GHz doubler/power amplifier chain MMIC based on a commercial 0.15 um GaAs pHEMT process has been developed that requires low input drive power and produces high output power with high fundamental suppression without external filter. The maximum conversion gain is 17 dB with -25 dB fundamental signal suppression and saturated output power is 19 dBm at 59 GH output frequency. Packaging and interconnects are discussed and as a alternative to wire bonding, flip-chip mounting test with SNU´s MCM-D (multi-chip module) substrate are presented. These test indicate that the presented MMIC and this flip- chip technologies are especially well suited for the 60 GHz wireless communication systems.
Keywords :
HEMT integrated circuits; MIMIC; flip-chip devices; millimetre wave amplifiers; multichip modules; PA chain MMIC; flip-chip mounted frequency doubler; frequency 30 GHz to 60 GHz; gain 17 dB; high output power; low input power; multi-chip module substrate; pHEMT process; power amplifier chain MMIC; signal suppression; size 0.15 mum; wireless communication systems; Filters; Frequency conversion; Gain; Gallium arsenide; High power amplifiers; MMICs; PHEMTs; Packaging; Power amplifiers; Power generation; 60 GHz; chain; doubler; flip-chip; packaging; power amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio and Wireless Symposium, 2008 IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1462-8
Electronic_ISBN :
978-1-4244-1463-5
Type :
conf
DOI :
10.1109/RWS.2008.4463516
Filename :
4463516
Link To Document :
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