Title :
Ferroelectric MIM and MOS structure of laser deposited (Sr0.2 Ba0.8)TiO3 thin films
Author :
Cheng, H.F. ; Lin, I.N.
Author_Institution :
Dept. of Phys., NTNU, Taipei, Taiwan
Abstract :
The laser ablation technique has been applied to synthesize the (Sr0.2Ba0.8)TiO3 thin films. Substrate temperature and chamber oxygen pressure were observed to affect the characteristics of the films most prominently. The metal-insulator-metal (MIM) structure of the films deposited on Pt-coated Si-substrates, possesses better ferroelectric properties than those of the metal-oxide-semiconductor (MOS) structure, as demonstrated by hysteresis loops of remanence Pr=1.56 μC/cm2 and coercivity Ec=13.5 kV/cm. The ferroelectricity of MIM structure is also indicated by butterfly C-V characteristics while that of MOS structure is depicted by hysteresis C-V curves. The charge-discharge test reveals that the effective dielectric constant of the ferroelectric (Sr0.2Ba0.8)TiO3 thin films can reach a value as high as εr=788
Keywords :
MIM structures; MIS structures; barium compounds; dielectric hysteresis; ferroelectric semiconductors; ferroelectric thin films; permittivity; pulsed laser deposition; strontium compounds; MIM structure; MOS structure; Pt-Si; Pt-coated Si-substrates; Si; Sr0.2Ba0.8TiO3; butterfly C-V characteristics; characteristics; charge-discharge test; coercivity; effective dielectric constant; ferroelectric; hysteresis loops; laser ablation technique; laser deposited (Sr0.2Ba0.8)TiO3 thin films; remanence; substrate temperature; Capacitance-voltage characteristics; Ferroelectric films; Ferroelectric materials; Hysteresis; Laser ablation; Metal-insulator structures; Remanence; Strontium; Temperature; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
DOI :
10.1109/ISAF.1994.522297
