Title :
Design and implementation of an inverse class-F power amplifier with 79 % efficiency by using a switch-based active device model
Author :
Aflaki, Pouya ; Negra, Renato ; Ghannouchi, Fadhel M.
Author_Institution :
Univ. of Calgary, Calgary
Abstract :
This paper presents the design and implementation of an inverse class-F power amplifier using a commercially available GaN 2 W power transistor. A switch-based model for this transistor was implemented in ADS and used to design this high efficiency amplifier. Simulation results with the developed model show drain efficiency of 79%, more than 19 dB of large-signal gain for an output power of greater than 5 W at 1 GHz. These values are confirmed by measurements, showing the usefulness of the switch-based active device model for this type of switching-mode power amplifiers.
Keywords :
III-V semiconductors; UHF power amplifiers; gallium compounds; switching circuits; wide band gap semiconductors; ADS; GaN; efficiency 79 percent; frequency 1 GHz; inverse class-F power amplifier; large-signal gain; power 2 W; power amplifier design; power transistor; switch-based active device model; switching-mode power amplifiers; Design engineering; Gallium nitride; Impedance; Linearity; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Switches; Transmitters; Voltage; GaN HEMT; Power amplifier; high efficiency; inverse class-F PA; switching-mode;
Conference_Titel :
Radio and Wireless Symposium, 2008 IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1462-8
Electronic_ISBN :
978-1-4244-1463-5
DOI :
10.1109/RWS.2008.4463519
