Title :
Hemispherical-grained LPCVD-polysilicon films in use for MEMS applications
Author :
Suzuki, Kenichiro
Author_Institution :
LSI Basic Res. Labs., NEC Corp., Tsukuba, Japan
Abstract :
This paper describes the mechanical properties of hemispherical-grained (HSG) polysilicon. While HSG polysilicon can be fabricated in a manner similar to conventional LPCVD, it has mechanical properties and a morphology that are very different from those of conventional polysilicon and amorphous silicon: tensile stress built in an as-deposited film and large roughness located on the surface. The formation of HSG occurs on the amorphous surface, although polycrystallization due to annealing usually occurs on the silicon-to-dioxide interface surface
Keywords :
CVD coatings; annealing; crystal microstructure; elemental semiconductors; internal stresses; micromechanical devices; semiconductor thin films; silicon; surface topography; 580 to 600 C; MEMS applications; Si; Si-SiO2; Si-SiO2 interface surface; amorphous surface; annealing; hemispherical-grained LPCVD-polysilicon films; mechanical properties; morphology; polycrystallization; residual stress control; sticking prevention; surface roughness; tensile stress; Amorphous materials; Amorphous silicon; Annealing; Mechanical factors; Micromechanical devices; Rough surfaces; Semiconductor films; Surface morphology; Surface roughness; Tensile stress;
Conference_Titel :
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-3829-4
DOI :
10.1109/SENSOR.1997.613631
