Hemispherical-grained LPCVD-polysilicon films in use for MEMS applications

Author

Suzuki, Kenichiro

Author_Institution

LSI Basic Res. Labs., NEC Corp., Tsukuba, Japan

Volume

1

fYear

1997

fDate

16-19 Jun 1997

Firstpage

253

Abstract

This paper describes the mechanical properties of hemispherical-grained (HSG) polysilicon. While HSG polysilicon can be fabricated in a manner similar to conventional LPCVD, it has mechanical properties and a morphology that are very different from those of conventional polysilicon and amorphous silicon: tensile stress built in an as-deposited film and large roughness located on the surface. The formation of HSG occurs on the amorphous surface, although polycrystallization due to annealing usually occurs on the silicon-to-dioxide interface surface

Keywords

CVD coatings; annealing; crystal microstructure; elemental semiconductors; internal stresses; micromechanical devices; semiconductor thin films; silicon; surface topography; 580 to 600 C; MEMS applications; Si; Si-SiO₂; Si-SiO₂ interface surface; amorphous surface; annealing; hemispherical-grained LPCVD-polysilicon films; mechanical properties; morphology; polycrystallization; residual stress control; sticking prevention; surface roughness; tensile stress; Amorphous materials; Amorphous silicon; Annealing; Mechanical factors; Micromechanical devices; Rough surfaces; Semiconductor films; Surface morphology; Surface roughness; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on

Conference_Location

Chicago, IL

Print_ISBN

0-7803-3829-4

Type

conf

DOI

10.1109/SENSOR.1997.613631

Filename

613631