Title :
Micropatterning process of ferroelectric oxides by irradiation of an electron beam on metal naphthenate films
Author :
Okamura, Soichiro ; Kakimi, Atsushi ; Yagi, Yukie ; Mori, Katsumi ; Tsukamoto, Takeyo
Author_Institution :
Dept. of Appl. Phys., Sci. Univ. of Tokyo, Japan
Abstract :
Fine micropatterns with linewidth of 0.35 μm were fabricated by irradiation with an electron beam of metal naphthenate films, being precursors of ferroelectric oxides, and development with a solvent. Relatively large patterns were crystallized into the single phase Bi4Ti3O12 with c-axis orientation by successive heat-treatment at 800°C. Micropatterns with linewidth of 1 μm were crystallized into single crystals and their volume was reduced to 15% by the heat-treatment of PZT and Bi4Ti3 O12 thin films formed by the dipping pyrolysis method, which is the base of this patterning process. Good ferroelectric properties were exhibited; the remanent polarization Pr and the coercive field Ec were 24 μC/cm2 and 39 kV/cm for PZT, and 1.6 μC/cm2 and 24 kV/cm for Bi4 Ti3O12, respectively
Keywords :
bismuth compounds; coating techniques; dielectric polarisation; electron beam lithography; ferroelectric thin films; heat treatment; lead compounds; piezoceramics; pyrolysis; 0.35 micron; 1 micron; 800 degC; Bi4Ti3O12; PZT; PbZrO3TiO3; c-axis orientation; coercive field; crystallization; dipping pyrolysis method; electron beam irradiation; ferroelectric oxides; ferroelectric properties; heat-treatment; linewidth; metal naphthenate films; micropatterning process; remanent polarization; single phase; Crystallization; Dry etching; Electron beams; Fabrication; Ferroelectric films; Ferroelectric materials; Semiconductor thin films; Silicon; Solvents; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
DOI :
10.1109/ISAF.1994.522298
