Micromechanical resonant magnetic sensor in standard CMOS

Author

Eyre, Beverley ; Pister, Kristofer S J

Author_Institution

Dept. of Electr. & Electron. Eng., Muroran Inst. of Technol., Hokkaido, Japan

Volume

1

fYear

1997

fDate

16-19 Jun 1997

Firstpage

405

Abstract

A novel magnetic field sensor has been fabricated using xenon difluoride etching of standard CMOS. The field is detected by measuring the vibration amplitude of a mechanical Lorentz force oscillator. The oscillator consists of a current loop on a silicon dioxide plate. Amplitude is detected with a polysilicon piezoresistor Wheatstone bridge. The devices were made in the Orbit 2 micron N-well process through MOSIS

Keywords

CMOS integrated circuits; Hall effect transducers; bridge circuits; magnetic sensors; micromechanical resonators; microsensors; piezoresistive devices; thermal noise; vibration measurement; xenon compounds; 2 mum; MOSIS; Orbit 2 micron N-well process; Si; SiO₂; SiO₂ plate; Xe difluoride etching; XeF₂; current loop; magnetic field sensor; mechanical Lorentz force oscillator; micromechanical resonant magnetic sensor; polysilicon piezoresistor Wheatstone bridge; standard CMOS magnetometer; vibration amplitude; Etching; Extraterrestrial measurements; Magnetic field measurement; Magnetic resonance; Magnetic sensors; Mechanical sensors; Micromechanical devices; Oscillators; Vibration measurement; Xenon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on

Conference_Location

Chicago, IL

Print_ISBN

0-7803-3829-4

Type

conf

DOI

10.1109/SENSOR.1997.613670

Filename

613670