Magnetoresistance effect of InAs quantum well structure grown on GaAs substrates by molecular beam epitaxy

Author

Yoshida, T. ; Okamoto, A. ; Muramatsu, S. ; Kuze, N. ; Shibasaki, I.

Author_Institution

Corp. Res. & Dev. Adm., Asahi Chem. Ind. Co. Ltd., Japan

Volume

1

fYear

1997

fDate

16-19 Jun 1997

Firstpage

417

Abstract

We have developed a new type of semiconductor magnetoresistance sensor. InAs deep quantum well structures (InAs DQWs) were grown on a GaAs substrate with AlGaAsSb insulating layers by molecular beam epitaxy (MBE). The magnetoresistance effect of these InAs DQWs has been measured for the first time. The large magnetoresistance and geometrical effect of a InAs DQWs MR element have been observed. The InAs DQWs MR sensor is promising for future magnetic sensor applications, such as those in automobiles

Keywords

III-V semiconductors; automotive electronics; gallium arsenide; indium compounds; magnetic sensors; magnetic variables measurement; magnetoresistive devices; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor quantum wells; semiconductor technology; substrates; AlGaAsSb; AlGaAsSb insulating layers; GaAs; GaAs substrates; InAs; InAs quantum well structure; MBE; automobiles; deep quantum well structures; geometrical effect; magnetic sensor; magnetoresistance effect; molecular beam epitaxy; semiconductor magnetoresistance sensor; Electrodes; Electron mobility; Gallium arsenide; Insulation; Magnetic sensors; Magnetoresistance; Molecular beam epitaxial growth; Substrates; Thin film sensors; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on

Conference_Location

Chicago, IL

Print_ISBN

0-7803-3829-4

Type

conf

DOI

10.1109/SENSOR.1997.613673

Filename

613673