Title :
5 MHz, 2 N/m piezoresistive cantilevers with INCISIVE tips
Author :
Ried, R.P. ; Mamin, H.J. ; Terris, B.D. ; Fan, L.-S. ; Rugar, D.
Author_Institution :
Res. Div., IBM Almaden Res. Center, San Jose, CA, USA
Abstract :
Piezoresistive atomic-force-microscope (AFM) cantilevers with sensitivities of (AR/R)/Å=1.1×10-5, displacement resolutions of 2×10-/3 Å√Hz, mechanical response times of less than 90 ns, and stiffnesses of 2 N/m have been fabricated from a silicon-on-insulator (SOI) wafer using a novel frontside-only release process. To reduce mass, the cantilevers utilize novel INCISIVE (IN-plane, Crystallographically-defined-SIlicon, VariablE aspect-ratio) tips with radius of curvature of 40 Å. The cantilevers have been used in an experimental AFM data storage system to read back data with an areal density of 10 Gb/cm2. Some cantilever designs have sufficient displacement resolution to detect their own thermal vibration in air. The INCISIVE tips also have applications to other types of sensors
Keywords :
atomic force microscopy; elemental semiconductors; microactuators; piezoresistive devices; silicon; silicon-on-insulator; 40 angstrom; 5 MHz; 90 ns; INCISIVE tips; SOI wafer; Si; areal density; atomic-force-microscopy; displacement resolutions; frontside-only release process; mechanical response times; piezoresistive cantilevers; stiffnesses; thermal vibration; Atomic force microscopy; Audio systems; Delay; Lithography; Memory; Piezoresistance; Scanning electron microscopy; Silicon on insulator technology; Thermomechanical processes; Vibrations;
Conference_Titel :
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-3829-4
DOI :
10.1109/SENSOR.1997.613682