DocumentCode :
3141833
Title :
Ultra-low resistance, nondestructive contact system for InP/InGaAs/InP double heterostructure TPV devices
Author :
Fatemi, Navid S. ; Weizer, Victor G. ; Wilt, David M. ; Hoffman, Richard W., Jr.
Author_Institution :
Essential Res. Inc., Cleveland, OH, USA
fYear :
1996
fDate :
13-17 May 1996
Firstpage :
85
Lastpage :
88
Abstract :
A contact system for use on the n+ InP window layer of an InP/InGaAs/InP thermophotovoltaic (TPV) cell is described. The contact system, composed of an Au-7 at.% Ge mixture, exhibits very low contact resistivity values on both lattice matched and lattice mismatched heterostructures without the need for contact sintering. Specific contact resistivity values in the low 10-6 Ω-cm2 range are achieved (without sintering) for the lattice matched devices. For the lattice mismatched devices resistivity values approaching the theoretical minimum value in the mid 10-8 Ω-cm2 range are achieved, again without sintering
Keywords :
III-V semiconductors; contact resistance; electrical contacts; electrical resistivity; gallium arsenide; germanium alloys; gold alloys; indium compounds; p-n heterojunctions; photovoltaic cells; semiconductor materials; Au-7 at.% Ge mixture; Au-Ge contact; AuGe; InP-InGaAs-InP; InP/InGaAs/InP double heterostructure; InP/InGaAs/InP thermophotovoltaic cell; lattice matched heterostructures; lattice mismatched heterostructures; nondestructive contact; ultra-low resistance contact; very low contact resistivity; Conductivity; Contact resistance; Energy conversion; Indium gallium arsenide; Indium phosphide; Lattices; Metallization; Photonic band gap; Radiative recombination; Surface resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
ISSN :
0160-8371
Print_ISBN :
0-7803-3166-4
Type :
conf
DOI :
10.1109/PVSC.1996.563952
Filename :
563952
Link To Document :
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