Title :
Characterization of sputter-deposited (Ba,Sr)TiO3 thin films on the sidewalls of fine-patterned electrodes
Author :
Yamamichi, Shintaro ; Takemura, Koichi ; Sakuma, Toshiyuki ; Watanabe, Hirohito ; Ono, Haruhiko ; Tokashiki, Ken ; Ikawa, Eiji ; Miyasaka, Yoichi
Author_Institution :
Fundamental Res. Labs., NEC Corp., Kawasaki, Japan
Abstract :
The dielectric properties of high dielectric constant thin films on the electrode sidewalls were evaluated for the first time, and sputter-deposited (Ba,Sr)TiO3 thin films were characterized on the sidewalls of RuO2 electrodes patterned down to submicron sizes. A fairly large step coverage around 50% was obtained for (Ba,Sr)TiO3. The εr value for (Ba,Sr)TiO 3 films on the sidewalls was the same as that for the films on the top surface, but the leakage current was larger. The (Ba,Sr)TiO 3 films on the sidewalls were found to be well crystallized, however, the grain size was smaller, and a porous structure was observed by TEM analysis
Keywords :
barium compounds; electrodes; ferroelectric materials; ferroelectric thin films; grain size; permittivity; porous materials; ruthenium compounds; sputter deposition; strontium compounds; transmission electron microscopy; (BaSr)TiO3; RuO2; TEM analysis; characterization; dielectric properties; fine-patterned electrode sidewall; grain size; high dielectric constant thin films; leakage current; porous structure; sputter-deposited (Ba,Sr)TiO3 thin films; step coverage; submicron sizes; Binary search trees; Capacitance; Capacitors; Dielectric thin films; Electrodes; Erbium; Etching; High-K gate dielectrics; Leakage current; Sputtering;
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
DOI :
10.1109/ISAF.1994.522301
