Title :
A novel SiC on insulator technology using wafer bonding
Author :
Vinod, Krishna N. ; Zorman, Christian A. ; Mehregany, Mehran
Author_Institution :
Dept. of Electr. Eng. & Appl. Phys., Case Western Reserve Univ., Cleveland, OH, USA
Abstract :
This paper reports on a process to fabricate a single crystal 3C-SiC on SiO2 structure using a wafer bonding technique. The process uses the bonding of two polished polysilicon surfaces to transfer a 3C-SiC film grown on a Si wafer to a SiO2 film grown on a Si wafer. 3C-SiC films grown on the 3C-SiC on SiO2 structure have a much lower defect density than conventional 3C-SiC on Si films
Keywords :
elemental semiconductors; leakage currents; micromachining; semiconductor materials; silicon; silicon compounds; wafer bonding; SiC-SiO2; defect density; leakage currents; polished polysilicon surfaces; surface micromachining; wafer bonding; Bonding processes; Crystallization; Etching; Insulation; Micromachining; Oxidation; Semiconductor films; Silicon carbide; Substrates; Wafer bonding;
Conference_Titel :
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-3829-4
DOI :
10.1109/SENSOR.1997.613736