DocumentCode
314194
Title
Si-to-Si wafer bonding using evaporated glass
Author
De Reus, Roger ; Lindahl, Michael
Author_Institution
Mikroelektronik Centret, Tech. Univ. Lyngby, Denmark
Volume
1
fYear
1997
fDate
16-19 Jun 1997
Firstpage
661
Abstract
Anodic bonding of Si to Si four inch wafers using evaporated glass was performed in air at temperatures ranging from 300°C to 450°C. Although annealing of Si/glass structures around 340°C for 15 minutes eliminates stress, the bonded wafer pairs exhibit compressive stress. Pull testing revealed maximum bond strengths greater than 50 N/mm2 and an average bond strength of 30 N/mm2 . The bond strength is independent of both the bonding temperature and the feature size. We observed no fracture at the actual bond interface
Keywords
annealing; electron beam deposition; elemental semiconductors; micromechanical devices; silicon; wafer bonding; 300 to 450 degC; Si-Si; annealing; anodic bonding; average bond strength; compressive stress; electron beam evaporation; maximum bond strengths; micromechanical devices; wafer bonding; Annealing; Compressive stress; Glass; Rough surfaces; Sputtering; Surface roughness; Temperature sensors; Testing; Thermal stresses; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Conference_Location
Chicago, IL
Print_ISBN
0-7803-3829-4
Type
conf
DOI
10.1109/SENSOR.1997.613738
Filename
613738
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