DocumentCode
314201
Title
Effects of metallic impurities on anisotropic etching of silicon in aqueous KOH-solutions
Author
Hein, A. ; Dorsch, O. ; Obermeier, E.
Author_Institution
Microsensor & Microactuator Technol. Center, Tech. Univ. Berlin, Germany
Volume
1
fYear
1997
fDate
16-19 Jun 1997
Firstpage
687
Abstract
Various effects of metallic impurities dissolved in aqueous KOH solutions on the anisotropic etching of silicon are investigated. The changes of the anisotropy, surface roughness of {100} and {111} planes and the shape of convex corners are presented. Metals such as iron, sodium, chromium, aluminum and zinc cause an increase, and copper and nickel a decrease in the etch anisotropy. The observed surface roughness increases strongly with impurity content. At lower contents of metallic impurities the angle of the convex corners have a value near 150°. However, with rising metallic ion content the value goes down to 143°
Keywords
elemental semiconductors; etching; impurities; micromachining; silicon; surface topography; KOH:Al; KOH:Cd; KOH:Cr; KOH:Cu; KOH:Fe; KOH:Mn; KOH:Na; KOH:Pb; KOH:Zn; Si; anisotropic etching; aqueous KOH-solutions; convex corners shape; etch anisotropy; metallic impurities; micromachining; surface roughness; Aluminum; Anisotropic magnetoresistance; Chromium; Etching; Impurities; Iron; Rough surfaces; Shape; Silicon; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Conference_Location
Chicago, IL
Print_ISBN
0-7803-3829-4
Type
conf
DOI
10.1109/SENSOR.1997.613745
Filename
613745
Link To Document