Title :
High performance RF characteristics of raised gate/source/drain CMOS with Co salicide
Author :
Ohguro, T. ; Naruse, H. ; Sugaya, H. ; Nakamura, S. ; Morifuji, E. ; Kimijima, H. ; Yoshitomi, T. ; Morimoto, T. ; Momose, H.S. ; Katsumata, Y. ; Iwai, H.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
In order to obtain high performance analog MOSFETs, it is important to reduce gate resistance. Recently W/Ti, CoSi/sub 2/ and NiSi gate electrodes have been proposed to realize these requirements. Especially, the Co salicided T-shape gate electrode realizes easily a low gate resistance below 1.5 ohm/sq. with a small increase in the number of process steps. Additionally, short channel effects are improved because the junction depth from the Si substrate surface at deeper source and drain regions becomes shallower due to the raised source and drain. In this paper, we demonstrate the excellent analog characteristics of Co salicided T-shape gate RF CMOS technology making use of a raised gate/source/drain structure. Extremely high fmax value of 70 GHz was realized by 0.10 μm gate length nMOSFET with low noise and low power consumption.
Keywords :
CMOS integrated circuits; UHF integrated circuits; cobalt compounds; integrated circuit metallisation; 0.1 micron; 2 GHz; 70 GHz; Co salicide; CoSi/sub 2/; CoSi/sub 2/ gate electrodes; Si; T-shape gate RF CMOS technology; T-shape gate electrode; gate resistance reduction; high performance RF characteristics; high performance analog MOSFETs; low noise; low power consumption; raised gate/source/drain CMOS; short channel effects improvement; Annealing; CMOS technology; Electrodes; Energy consumption; MOS devices; MOSFET circuits; Radio frequency; Substrates; Surface resistance; Tin;
Conference_Titel :
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-4770-6
DOI :
10.1109/VLSIT.1998.689231
