DocumentCode :
3142257
Title :
Modelling of tandem cell temperature coefficients
Author :
Friedman, D.J.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
fYear :
1996
fDate :
13-17 May 1996
Firstpage :
89
Lastpage :
92
Abstract :
This paper discusses the temperature dependence of the basic solar-cell operating parameters for a GaInP/GaAs series-connected two-terminal tandem cell. The effects of series resistance and of different incident solar spectra are also discussed
Keywords :
III-V semiconductors; electric resistance; gallium arsenide; indium compounds; semiconductor device models; semiconductor materials; solar cells; thermal analysis; GaInP-GaAs; GaInP/GaAs series-connected tandem cell; GaInP/GaAs tandem solar cell; GaInP/GaAs two-terminal tandem cell; incident solar spectra; series resistance; solar-cell operating parameters; temperature coefficients modelling; temperature dependence; Absorption; Charge carrier lifetime; Circuit simulation; Gallium arsenide; Laboratories; Photonic band gap; Predictive models; Renewable energy resources; Temperature dependence; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
ISSN :
0160-8371
Print_ISBN :
0-7803-3166-4
Type :
conf
DOI :
10.1109/PVSC.1996.563954
Filename :
563954
Link To Document :
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