Title :
30.3% PAE HBT Doherty power amplifier for 2.5∼2.7 GHz mobile WiMAX
Author :
Kang, Dong-Hyung ; Choi, Jang-Young ; Kim, Dongkyu ; Yu, Daren ; Min, Kyoungdoug ; Kim, Bumki
Author_Institution :
Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
The Doherty power amplifier for mobile WiMAX application is fully integrated in 1.2 mm × 1.2 mm using a 2-um InGaP/GaAs HBT process. The direct input power dividing technique is employed on a chip. Broadband input and output matching techniques are used for broadband Doherty operation. A 1.5 times larger peaking amplifier than carrier amplifier is used to have high efficiency for IEEE 802.16e m-WiMAX signal, which has 9.6 dB crest factor and 8.75 MHz bandwidth. The PA with a supply voltage of 3.4V has an EVM of 2.3% and a PAE of 31.5% at an output power of 24.75 dBm and an operating frequency of 2.6 GHz. The PAE of over 30.3% and the output power of over 24.6 dBm with the EVM of lower than 3.15% and the gain variation of 0.2 dB are achieved across 2.5~2.7 GHz without any assistant technique for linearization.
Keywords :
IEEE standards; WiMax; heterojunction bipolar transistors; mobile communication; power amplifiers; HBT process; IEEE 802.16e m-WiMAX signal; InGaP-GaAs; PAE HBT Doherty power amplifier; broadband Doherty operation; direct input power dividing technique; frequency 2.5 GHz to 2.7 GHz; mobile WiMAX; Bandwidth; Broadband amplifiers; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Impedance matching; Power amplifiers; Power generation; Voltage; WiMAX;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5517552