Characteristics of the power electronics equipments applying the SiC power devices

Author

Mine, Hironori ; Matsumoto, Yasushi ; Yamada, Ryuji ; Mino, Kazuaki ; Kimura, Hiroshi ; Kondo, Yasushi ; Ikeda, Yoshinari

Author_Institution

Corp. R&D Headquarters, Fuji Electr. Co., Ltd., Tokyo, Japan

fYear

2012

fDate

3-5 July 2012

Firstpage

1

Lastpage

6

Abstract

Power Electronics Equipments applying superior characteristics Silicon Carbide (SiC) power semiconductors have been researching and developing. Applying the hybrid modules using Si-IGBT and SiC-SBD (Schottky Barrier Diode) to the motor drive inverter enables reduction of the loss 25% of the inverter part. Moreover applying the All-SiC modules using SiC-MOSFET and SiC-SBD to the solar inverter enables to be the efficiency of the main circuit unit 99%, and to be the volume of the equipment 25% to conventional one.

Keywords

MOSFET circuits; Schottky diodes; insulated gate bipolar transistors; invertors; motor drives; power electronics; power semiconductor devices; silicon; silicon compounds; wide band gap semiconductors; IGBT; MOSFET; SBD; Schottky barrier diode; Si; SiC; hybrid modules; motor drive inverter; power device; power electronic equipment; power semiconductor; Insulated gate bipolar transistors; Inverters; Motor drives; Silicon; Silicon carbide; Temperature; MOSFET; Motor Drive Inverter; SBD; SiC; Solar Inverter;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Engineering and Renewable Energy (ICPERE), 2012 International Conference on

Conference_Location

Bali

Print_ISBN

978-1-4673-2468-7

Electronic_ISBN

978-1-4673-2469-4

Type

conf

DOI

10.1109/ICPERE.2012.6287252

Filename

6287252