Title :
Oscillator phase-noise reduction using low-noise high-Q active resonators
Author :
Nick, Morteza ; Mortazawi, Amir
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
This paper describes a method for the design of a low phase-noise planar oscillator based on a compact low-noise active elliptic filter for its frequency stabilization. The phase-noise of the oscillator is significantly reduced by taking advantage of the high frequency-selectivity and low-noise characteristics of the active filter. The filter occupies a relatively small area due to its two-pole dual-mode structure, making it suitable for the fabrication of very compact low phase-noise oscillators. As a proof of concept, a X-band oscillator using a packaged SiGe HBT transistor is designed and tested. The oscillator, operating at 8.1 GHz, achieves a measured phase-noise of -150 dBc/Hz at 1 MHz frequency offset with 10 dBm output power. To the best of our knowledge, the oscillator demonstrated in this paper presents the lowest phase-noise among published planar oscillators, to date.
Keywords :
active filters; heterojunction bipolar transistors; oscillators; phase noise; silicon compounds; SiGe; X-band oscillator; active filter; compact low-noise active elliptic filter; frequency 1 MHz; frequency 8.1 GHz; frequency selectivity; frequency stabilization; low phase-noise planar oscillator; low-noise high-Q active resonator; oscillator phase-noise reduction; packaged SiGe HBT transistor; two-pole dual-mode structure; Active filters; Design methodology; Fabrication; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Oscillators; Packaging; Resonator filters; Silicon germanium; Active resonator; dual-mode filter; oscillator; phase noise; quality factor;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5517556