Study of radiation effects on PIN photodiodes with deep-trap levels using computer modeling

Author

Cappelletti, M.A. ; Cédola, A.P. ; Barón, S. ; Casas, G. ; Blancá, E. L Peltzer y

Author_Institution

Grupo de Estudio de Mater. y Dispositivos Electronicos (GEMyDE), Univ. Nac. de La Plata, La Plata

fYear

2009

fDate

2-5 March 2009

Firstpage

1

Lastpage

6

Abstract

In the present work, a complete numerical analysis of the influence of deep-trap levels on the dark current of silicon PIN photodiodes under 1 MeV neutron radiation was done. Results corroborate that energy levels near the mid-gap affect to a great extent the dark current. Radiation tolerances of undoped and gold-doped devices were compared through simulations. It has been concluded that gold in silicon reduces the neutron-induced damage. Finally, a model to calculate the dark current of irradiated devices doped with deep-impurities is presented.

Keywords

deep levels; elemental semiconductors; gold; impurity states; p-i-n diodes; photodiodes; radiation effects; silicon; Si:Au; dark current; deep-trap levels; neutron-induced damage; radiation effects; silicon PIN photodiodes; Dark current; Energy states; Fabrication; Gold; Neutrons; PIN photodiodes; Photonic band gap; Radiation effects; Semiconductor impurities; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Test Workshop, 2009. LATW '09. 10th Latin American

Conference_Location

Buzios, Rio de Janeiro

Print_ISBN

978-1-4244-4207-2

Electronic_ISBN

978-1-4244-4206-5

Type

conf

DOI

10.1109/LATW.2009.4813803

Filename

4813803