Excellent process control technology for highly manufacturable and high performance 0.18 /spl mu/m CMOS LSIs

Author

Nakayama, T. ; Asamura, T. ; Kako, M. ; Murota, M. ; Matsumoto, M. ; Washizu, Y. ; Tomose, K. ; Kasai, K. ; Okayama, Y. ; Hashimoto, K. ; Ohuchi, K. ; Hattori, K. ; Shiozawa, J. ; Harakawa, H. ; Matsuoka, F. ; Kinugawa, M.

Author_Institution

ULSI Device Eng. Lab., Toshiba Corp., Yokohama, Japan

fYear

1998

fDate

9-11 June 1998

Firstpage

146

Lastpage

147

Abstract

Highly manufacturable and high performance 0.18 μm CMOS technology for logic LSIs with excellent process controllability has been proposed. N/sub 2/O based oxynitride process and OPC (Optical Proximity Correction) technology was developed and realized superior uniformity in CMOSFET characteristics. A new Ti salicide technology which was fine line effect free down to 0.15 μm was also established. These technologies were demonstrated and verified by application to 0.18 μm high performance logic LSI with high performance interconnects technology.

Keywords

CMOS integrated circuits; VLSI; integrated circuit interconnections; integrated circuit manufacture; integrated circuit metallisation; large scale integration; process control; 0.15 to 0.18 micron; CMOSFET characteristics; N/sub 2/O; N/sub 2/O based oxynitride process; Ti salicide technology; TiSi; high performance CMOS LSI; high performance interconnects technology; logic LSI; manufacturable LSI; optical proximity correction technology; process control technology; CMOS logic circuits; CMOS process; CMOS technology; Controllability; Large scale integration; MOSFET circuits; Manufacturing processes; Microprocessors; Nitrogen; Process control;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-4770-6

Type

conf

DOI

10.1109/VLSIT.1998.689234

Filename

689234