Title :
Molecular beam epitaxy grown GaInP top cells and GaAs tunnel diodes for tandem applications
Author :
Lammasniemi, J. ; Tappura, K. ; Jaakkola, R. ; Kazantsev, A. ; Rakennus, K. ; Uusimaa, P. ; Pessa, M.
Author_Institution :
Dept. of Phys., Tampere Univ. of Technol., Finland
Abstract :
Ga0.51In0.49P solar cells and GaAs tunnel diodes were grown by gas-source molecular beam epitaxy. The effect of various window layer materials, such as Al0.51In0.49 P, Al0.8Ga0.2As and ZnSe were studied for n-on-p Ga0.51In0.49P cells. The best carrier collection was obtained with Al0.51In0.49P window and with graded doping in emitter and base layers. A total-area AM0 efficiency of 14.0% for 2×2 cm2 area has been measured for this cell. The GaAs tunnel diodes were grown with Be-doping for p-type and Si-doping for n-type material. Specific resistance of 0.09 mΩcm2 and peak tunneling current of 200 A/cm2 were obtained for the best GaAs tunnel diodes. In addition, tunneling effect in a n++Ga0.51In0.49P/p++GaAs diode was observed
Keywords :
III-V semiconductors; electric resistance; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor materials; semiconductor thin films; solar cells; tunnel diodes; 14 percent; Al0.51In0.49P; Al0.8Ga0.2As; Be-doping; Ga0.51In0.49P; Ga0.51In0.49P solar cells; GaAs tunnel diodes; GaAs:Be; GaAs:Si; GaInP top cells; GaInP-GaAs; Si-doping; ZnSe; base layer; carrier collection; emitter layer; gas-source molecular beam epitaxy; graded doping; molecular beam epitaxy; n++Ga0.51In0.49P/p++GaAs diode; n-on-p Ga0.51In0.49P cells; peak tunneling current; specific resistance; tandem solar cells; total-area AM0 efficiency; window layer materials; Artificial intelligence; Doping; Epitaxial growth; Epitaxial layers; Gallium arsenide; Molecular beam epitaxial growth; Photovoltaic cells; Semiconductor diodes; Tunneling; Zinc compounds;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.563956
