مرکز منطقه ای اطلاع رساني علوم و فناوري - 0.2-<formula formulatype="inline"> <img src="/images/tex/16813.gif" alt="\\mu{\\rm m}"> </formula> AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition <formula formulatype="inline"> <img src="/images/tex/19216.gif" alt="{\\rm Al}

Title :

0.2- $\\mu{\\rm m}$ AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition ${\\rm Al}_{2}</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Dong Xu ; Kanin Chu ; Diaz, J. ; Wenhua Zhu ; Roy, Ranjit ; Pleasant, L. Mt ; Nichols, K. ; Chao, P.-C. ; Min Xu ; Ye, Peide D.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Microelectron. Center, BAE Syst., Nashua, NH, USA</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>34</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>6</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2013</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fDate : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Jun-13</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>744</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>746</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>We report a successful application of atomic layer deposition (ALD) aluminum oxide as a passivation layer to gallium nitride high electron-mobility transistors (HEMTs). This new passivation process results in 8%-10% higher dc maximum drain current and maximum extrinsic transconductance, about one order of magnitude lower drain current in the sub-threshold region, 10%-20% higher pulsed- <i>IV</i> drain current, and 27%-30% higher RF power with simultaneously 5-8 percentage point higher power-added efficiency. The achieved improvement in device performance is attributed to the outstanding quality of the interface between III-N and the ALD aluminum oxide resulting from the uniqueness of the adopted ALD process, featuring a wet-chemical-based wafer preparation as well as a pregrowth self-cleaning procedure in the growth chamber. This technology can be readily integrated into the HEMT-based integrated circuit fabrication process, making the ALD aluminum oxide-passivated GaN HEMTs excellent candidates for multiple microwave and millimeter-wave power applications.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>III-V semiconductors; aluminium compounds; atomic layer epitaxial growth; gallium compounds; high electron mobility transistors; microwave transistors; millimetre wave transistors; wide band gap semiconductors; ALD aluminum oxide-passivated HEMT; Al<sub>2</sub>O<sub>3</sub>; AlGaN-GaN; HEMT; HEMT-based integrated circuit fabrication process; RF power; atomic layer deposition aluminum oxide; dc maximum drain current; efficiency 5 percent to 8 percent; growth chamber; high electron-mobility transistors; magnitude lower drain current; maximum extrinsic transconductance; microwave-wave power applications; millimeter-wave power applications; pregrowth self-cleaning procedure; pulsed- IV drain current; size 0.2 mum; subthreshold region; wet-chemical-based wafer preparation; Aluminum oxide <formula formulatype=$ $({rm Al}_{2}{rm O}_{3})$; RF power; atomic layer deposition (ALD); gallium nitride (GaN); high electron mobility transistor (HEMT); passivation; pulsed-IV;