• DocumentCode
    3143100
  • Title

    Analysis of heteroepitaxial AlGaAs/Si tandem solar cell for concentrator applications

  • Author

    Yang, Ming-Ju ; Taylor, Stephen J. ; Yamaguchi, Masafumi

  • Author_Institution
    Toyota Technol. Inst., Nagoya, Japan
  • fYear
    1996
  • fDate
    13-17 May 1996
  • Firstpage
    105
  • Lastpage
    108
  • Abstract
    A development of monolithic AlGaAs/Si tandem solar cells for concentration application is proposed. A theoretical analysis was carried out to express the device parameters as a function of the doping concentration and the dislocation density. From the results of this theoretical analysis, it is demonstrated that when the dislocation density is reduced to lower than 104 cm-2, the photocurrent matching between the top cell and the bottom cell can be satisfied at the Al composition of AlxGa1-xAs, x=0.21 and the efficiency of the AlGaAs top cell increases rapidly in 1-100 Sun concentration region. In order to achieve very high efficiency, the dislocation density must be reduced to lower than 5×105 cm-2 and concentration ratios greater than 100 times must be used. From these results, it is suggested that monolithic AlGaAs/Si tandem solar cells have the potential to achieve high efficiency at low cost by using high solar concentration ratios
  • Keywords
    III-V semiconductors; aluminium compounds; dislocation density; elemental semiconductors; epitaxial growth; gallium arsenide; p-n heterojunctions; semiconductor device models; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon; solar cells; solar energy concentrators; AlGaAs-Si; AlGaAs/Si tandem solar cell; concentrator solar cells; dislocation density; doping concentration; heteroepitaxial solar cells; high efficiency; photocurrent matching; solar concentration ratios; Artificial intelligence; Cost function; Doping; Neodymium; Optical reflection; Photoconductivity; Photovoltaic cells; Semiconductor process modeling; Sun; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
  • Conference_Location
    Washington, DC
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-3166-4
  • Type

    conf

  • DOI
    10.1109/PVSC.1996.563958
  • Filename
    563958