Title :
An improved fast Id-Vg measurement technology with expanded application range
Author :
Wang, C. ; Yu, L.C. ; Campbell, J.P. ; Cheung, K.P. ; Xuan, Y. ; Ye, P.D. ; Suehle, J.S. ; Zhang, D.W.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
Fast Id-Vg measurements on very high performance devices (very low channel ON-resistance) and larger area devices (therefore large gate capacitance) are subject to serious distortions. Methods to minimize these distortions are introduced in this paper; thus expanding the applicable range of this important measurement technique.
Keywords :
capacitance; characteristics measurement; distortion; electric current measurement; semiconductor device measurement; semiconductor device reliability; voltage measurement; Id-Vg measurement; device reliability; distortion minimization; gate capacitance; high performance devices; larger area devices; semiconductor device measurement; very low channel ON-resistance; Area measurement; Capacitance measurement; Distortion measurement; Measurement techniques;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2009. IRW '09. IEEE International
Conference_Location :
S. Lake Tahoe, CA
Print_ISBN :
978-1-4244-3921-8
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2009.5383006
