• DocumentCode
    3143498
  • Title

    An improved fast Id-Vg measurement technology with expanded application range

  • Author

    Wang, C. ; Yu, L.C. ; Campbell, J.P. ; Cheung, K.P. ; Xuan, Y. ; Ye, P.D. ; Suehle, J.S. ; Zhang, D.W.

  • Author_Institution
    Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
  • fYear
    2009
  • fDate
    18-22 Oct. 2009
  • Firstpage
    163
  • Lastpage
    165
  • Abstract
    Fast Id-Vg measurements on very high performance devices (very low channel ON-resistance) and larger area devices (therefore large gate capacitance) are subject to serious distortions. Methods to minimize these distortions are introduced in this paper; thus expanding the applicable range of this important measurement technique.
  • Keywords
    capacitance; characteristics measurement; distortion; electric current measurement; semiconductor device measurement; semiconductor device reliability; voltage measurement; Id-Vg measurement; device reliability; distortion minimization; gate capacitance; high performance devices; larger area devices; semiconductor device measurement; very low channel ON-resistance; Area measurement; Capacitance measurement; Distortion measurement; Measurement techniques;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2009. IRW '09. IEEE International
  • Conference_Location
    S. Lake Tahoe, CA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4244-3921-8
  • Electronic_ISBN
    1930-8841
  • Type

    conf

  • DOI
    10.1109/IRWS.2009.5383006
  • Filename
    5383006
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3143498