Correlation of electrical properties with interface structures of CVD oxide-based oxynitride tunnel dielectrics

Author

Liu, Ziyuan ; Ishigaki, Hirokazu ; Ito, Shuu ; Ide, Takashi ; Makabe, Mariko ; Wilde, Markus ; Fukutani, Katsuyuki ; Kimura, Masahiro ; Miha, Vlaicu A. ; Yoshikawa, Hideki

Author_Institution

Test & Anal. Eng. Div., NEC Electron. Corp., Kawasaki, Japan

fYear

2009

fDate

18-22 Oct. 2009

Firstpage

145

Lastpage

147

Abstract

We compare the electrical properties and interface characteristics in terms of nitrogen depth distribution and hydrogen diffusion behavior of two CVD oxide tunnel films that were nitrided by NO and N₂O gas, respectively. The N₂O-oxynitride shows a stronger resistance against the approach of the SiO₂/Si interface by diffusing hydrogen in nuclear reaction analysis. This H diffusion behavior correlates with a characteristic N distribution in the tunnel oxide. The superior electrical quality of N₂O-oxynitride over the NO-oxynitride is attributed to the existence of a N-rich H-diffusion barrier layer in the front of the oxynitride/Si interface.

Keywords

chemical vapour deposition; dielectric thin films; diffusion barriers; elemental semiconductors; hydrogen; nitridation; nitrogen compounds; semiconductor-insulator boundaries; silicon; silicon compounds; CVD oxide-based oxynitride tunnel dielectric films; H; N₂O; NO; SiO₂-Si; diffusion barrier layer; hydrogen diffusion behavior; interface structures; nitrogen depth distribution; nuclear reaction analysis; Dielectrics; Electron traps; Electronic equipment testing; Gas industry; Hydrogen; Impurities; Indium tin oxide; Microcomputers; National electric code; Nitrogen;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2009. IRW '09. IEEE International

Conference_Location

S. Lake Tahoe, CA

ISSN

1930-8841

Print_ISBN

978-1-4244-3921-8

Electronic_ISBN

1930-8841

Type

conf

DOI

10.1109/IRWS.2009.5383009

Filename

5383009