Title :
Correlation of electrical properties with interface structures of CVD oxide-based oxynitride tunnel dielectrics
Author :
Liu, Ziyuan ; Ishigaki, Hirokazu ; Ito, Shuu ; Ide, Takashi ; Makabe, Mariko ; Wilde, Markus ; Fukutani, Katsuyuki ; Kimura, Masahiro ; Miha, Vlaicu A. ; Yoshikawa, Hideki
Author_Institution :
Test & Anal. Eng. Div., NEC Electron. Corp., Kawasaki, Japan
Abstract :
We compare the electrical properties and interface characteristics in terms of nitrogen depth distribution and hydrogen diffusion behavior of two CVD oxide tunnel films that were nitrided by NO and N2O gas, respectively. The N2O-oxynitride shows a stronger resistance against the approach of the SiO2/Si interface by diffusing hydrogen in nuclear reaction analysis. This H diffusion behavior correlates with a characteristic N distribution in the tunnel oxide. The superior electrical quality of N2O-oxynitride over the NO-oxynitride is attributed to the existence of a N-rich H-diffusion barrier layer in the front of the oxynitride/Si interface.
Keywords :
chemical vapour deposition; dielectric thin films; diffusion barriers; elemental semiconductors; hydrogen; nitridation; nitrogen compounds; semiconductor-insulator boundaries; silicon; silicon compounds; CVD oxide-based oxynitride tunnel dielectric films; H; N2O; NO; SiO2-Si; diffusion barrier layer; hydrogen diffusion behavior; interface structures; nitrogen depth distribution; nuclear reaction analysis; Dielectrics; Electron traps; Electronic equipment testing; Gas industry; Hydrogen; Impurities; Indium tin oxide; Microcomputers; National electric code; Nitrogen;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2009. IRW '09. IEEE International
Conference_Location :
S. Lake Tahoe, CA
Print_ISBN :
978-1-4244-3921-8
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2009.5383009
