Title :
Improvement on erase characteristics of SONOS flash memory by bandgap engineering of tunnel oxide
Author :
Li, Dong Hua ; Park, Byung-Gook
Author_Institution :
Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Gwanak, South Korea
Abstract :
We comparatively analyze the erase speed and long-term reliability between the conventional SONOS flash memory and the bandgap engineered SONOS flash memory devices. As a result, the bandgap engineered SONOS device is indeed proven to provide faster erase speed and better long-term data retention characteristics than the conventional SONOS device.
Keywords :
energy gap; flash memories; SONOS flash memory devices; bandgap engineering; erase characteristics; long-term data retention characteristics; tunnel oxide; CMOS technology; Charge carrier processes; Computer science; Electrons; Flash memory; Photonic band gap; Reliability engineering; SONOS devices; Silicon; Substrates;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2009. IRW '09. IEEE International
Conference_Location :
S. Lake Tahoe, CA
Print_ISBN :
978-1-4244-3921-8
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2009.5383011
