fWLR supported process development based on V- and J-ramp stress tests

In this work ramp stress procedures were utilized to support both process development as well as continued improvement in the reliability of tunnel oxides used in EEPROM devices of automotive applications. In order to enhance the reliability assessment opportunities trapped oxide charge (¿q_ot) breakdown distributions were constructed by combining the measured charge-to-breakdown (q_bd) distributions with representative difference IV-curves recorded during breakdown measurements. While the q_bd-data regularly used for interface quality assessment strongly depends on the type of ramp test, e.g. linearly RVS(T) (ramped voltage stress (test)), ERCS (exponentially ramped current stress), linear RCS (ramped current stress) and also its ramp speed, the tapped charge at breakdown is less dependent on measurement type and also very sensitive to interface properties.