Title :
The helium ion microscope for interconnect material imaging
Author :
Thompson, William ; Ogawa, Shinichi ; Stern, Lewis ; Scipioni, Larry ; Notte, John
Author_Institution :
ALIS Div., Carl Zeiss SMT, Peabody, MA, USA
Abstract :
The recently developed helium ion microscope (HIM) can be operated in three imaging modes; ion induced secondary electron (SE) mode, Rutherford Backscatter imaging (RBI) mode, and scanning transmission ion imaging (STIM) mode. When low k dielectric or copper interconnects are imaged in these modes, it was found that unique pattern dimension and fidelity information at sub-nanometer resolution is available for the first time. Our talk will discuss the helium ion microscope architecture and the imaging modes that may make it a tool of particular value to the low-k dielectric and dual damascene copper interconnect technology.
Keywords :
Rutherford backscattering; carbon compounds; copper; helium ions; interconnections; ion microscopy; low-k dielectric thin films; scanning-transmission electron microscopy; silicon compounds; Cu; Rutherford Backscatter imaging mode; SiCOH; copper interconnects; fidelity information; helium ion microscope; interconnect material imaging; interconnect material imaging mode; low k dielectric interconnects; pattern dimension; scanning transmission ion imaging mode; subnanometer resolution; Copper; Dielectric materials; Health information management; Helium; High-resolution imaging; Image resolution; Scanning electron microscopy; Shape; Transmission electron microscopy; Voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2009. IRW '09. IEEE International
Conference_Location :
S. Lake Tahoe, CA
Print_ISBN :
978-1-4244-3921-8
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2009.5383014
