Methodology for 3-dimensional high-density capacitor reliability evaluation

Wafer level accelerated testing is a key tool to perform fast reliability assessment of new technologies. This paper presents an innovative methodology developed to perform accurate life-time extrapolation of 3-dimensional (3D) high density capacitors through constant electric field stress (CES) test. This methodology is first based on dielectric thickness extraction from planar capacitor measurements. CES tests are then performed on 3D capacitors, adjusting the voltage stress with respect to the local dielectric thickness previously extracted. The efficiency of the methodology is demonstrated through constant voltage stress (CVS) and CES test results comparison.