The critical role of the defect structural relaxation for interpretation of noise measurements in MOSFETs

We present a comprehensive description of the processes contributing to the electron capture/emission by bulk oxide traps, which allows for interpretation of RTS and 1/f noise data and extraction of the trap characteristics. It is shown that the electron capture/emission times could be controlled by the trap structural relaxation (caused by the trapped electrons) rather than by the electron tunneling to/from the trap as generally assumed. The extracted model parameters, in particular, relaxation energy, allow identifying defect nature.