Title :
GaAs- and InAlGaAs-based concentrator-type cells for conversion of power transmitted by optical fibers
Author :
Fahrenbruch, Alan L. ; Lopez-Otero, L. ; Werthern, J.G. ; Wu, Ta-Chung
Author_Institution :
Dept. of Mater. Sci. & Eng., Stanford Univ., CA, USA
Abstract :
A novel application for high intensity GaAs-based solar cells is conversion of monochromatic light transmitted by fiber optics into electrical power for remote sensors. At present, the efficiencies of these devices are as high as 58%, and the systems can deliver 0.5 W electrical at distances of ≈1 km. A typical OMCVD grown, six sector GaAs-based device, with an illuminated portion 0.15 cm in diameter, produces VOC=6.7 V, JSC=8.15 A/cm2, and an efficiency of 55% under 820 nm illumination of 250 mW. Also reported are modeling and characterization of InxAlyGa1-x-yAs devices for operation at 1320 nm, to examine the tradeoffs between increased fiber transmission, larger currents and lower voltages, relative to GaAs
Keywords :
CVD coatings; III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; indium compounds; optical fibres; semiconductor device models; semiconductor device testing; semiconductor growth; semiconductor thin films; solar cells; solar energy concentrators; 0.5 W; 1 km; 1320 nm; 250 mW; 55 percent; 58 percent; 6.7 V; 820 nm; GaAs; GaAs concentrator solar cells; InAlGaAs; InAlGaAs concentrator solar cells; MOCVD growth; characterization; modelling; monochromatic light conversion; optical fiber transmission; remote sensors; semiconductor; Current measurement; Diodes; Heat sinks; Hysteresis; Particle measurements; Pulse measurements; Shape; Steady-state; Temperature sensors; Thermal conductivity;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.563961
