Simulation of statistical aspects of reliability in nano CMOS transistors

The evolution of the threshold voltage distribution in an ensemble of realistic n- and p- channel bulk MOSFETs caused by charge trapping on stress generated defect states at the Si/SiO₂ interface due to NBTI/PBTI is studied using 3-D statistical simulations. The simulations take into account the underlying random discrete dopant distribution in the transistors, which in conjunction with strategically positioned traps, could result in rare but dramatic changes in the transistor characteristics.