DocumentCode :
3143971
Title :
Design of a broadband and highly efficient 45W GaN power amplifier via simplified real frequency technique
Author :
Wu, David Yu-Ting ; Mkadem, Farouk ; Boumaiza, Slim
Author_Institution :
Univ. of Waterloo, Waterloo, ON, Canada
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1090
Lastpage :
1093
Abstract :
A comprehensive approach for designing broadband and highly efficient power amplifier based on optimal impedance analysis and simplified real frequency technique (SRFT) is presented. Upon determining the impedances for highest efficiency across the bandwidth of interest, the SRFT is used to obtain the optimal matching topology and element values. The effectiveness of this design technique is illustrated using a commercially available 45 W GaN device which achieved an average drain efficiency of 63% from 1.9 GHz to 2.9 GHz (~42%) with an average output power and gain of 45.8 dBm and 10.8 dB respectively. The PA with DPD yielded ACPR below -50 dBc when driven with WCDMA and LTE at 2.14 and 2.6 GHz respectively.
Keywords :
code division multiple access; impedance matching; power amplifiers; wideband amplifiers; ACPR; DPD; LTE; SRFT; WCDMA; broadband amplifier; drain efficiency; frequency 10.8 GHz to 2.9 GHz; frequency 2.14 GHz to 2.6 GHz; gain 10.8 dB; optimal impedance analysis; optimal matching topology; power 45 W; power amplifier; simplified real frequency technique; Bandwidth; Broadband amplifiers; Frequency; Gallium nitride; High power amplifiers; Impedance; Multiaccess communication; Optimal matching; Power generation; Topology; Broadband amplifiers; high efficiency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5517636
Filename :
5517636
Link To Document :
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