DocumentCode
3143974
Title
Impact of instrumental current scatter on fast Bias Temperature Instability testing
Author
Kerber, A. ; Zhao, K. ; Linder, B.P. ; Cartier, E.
Author_Institution
GLOBALFOUNDRIES, Yorktown Heights, NY, USA
fYear
2009
fDate
18-22 Oct. 2009
Firstpage
70
Lastpage
72
Abstract
To minimize charge relaxation during Bias Temperature Instability (BTI) tests, fast current sensing has become the mainstream methodology in recent years and fast source measurement units are now available commercially. In these instruments, the measurement delay and sampling time have to been significant reduced in order to meet the more stringent methodology specification of fast BTI testing. In this paper, the impact of these speed improvements in two commercially available source measurement units (SMUs) on the accuracy of threshold voltage measurements during fast BTI testing is studied in detail.
Keywords
CMOS integrated circuits; units (measurement); voltage measurement; BTI testing; CMOS devices; SMU; bias temperature instability testing; charge relaxation; current sensing; fast source measurement units; instrumental current scatter; measurement delay; sampling time; source measurement units; threshold voltage measurements; Delay effects; Instruments; Measurement units; Sampling methods; Scattering; Temperature sensors; Testing; Threshold voltage; Time measurement; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2009. IRW '09. IEEE International
Conference_Location
S. Lake Tahoe, CA
ISSN
1930-8841
Print_ISBN
978-1-4244-3921-8
Electronic_ISBN
1930-8841
Type
conf
DOI
10.1109/IRWS.2009.5383029
Filename
5383029
Link To Document