• DocumentCode
    3143974
  • Title

    Impact of instrumental current scatter on fast Bias Temperature Instability testing

  • Author

    Kerber, A. ; Zhao, K. ; Linder, B.P. ; Cartier, E.

  • Author_Institution
    GLOBALFOUNDRIES, Yorktown Heights, NY, USA
  • fYear
    2009
  • fDate
    18-22 Oct. 2009
  • Firstpage
    70
  • Lastpage
    72
  • Abstract
    To minimize charge relaxation during Bias Temperature Instability (BTI) tests, fast current sensing has become the mainstream methodology in recent years and fast source measurement units are now available commercially. In these instruments, the measurement delay and sampling time have to been significant reduced in order to meet the more stringent methodology specification of fast BTI testing. In this paper, the impact of these speed improvements in two commercially available source measurement units (SMUs) on the accuracy of threshold voltage measurements during fast BTI testing is studied in detail.
  • Keywords
    CMOS integrated circuits; units (measurement); voltage measurement; BTI testing; CMOS devices; SMU; bias temperature instability testing; charge relaxation; current sensing; fast source measurement units; instrumental current scatter; measurement delay; sampling time; source measurement units; threshold voltage measurements; Delay effects; Instruments; Measurement units; Sampling methods; Scattering; Temperature sensors; Testing; Threshold voltage; Time measurement; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2009. IRW '09. IEEE International
  • Conference_Location
    S. Lake Tahoe, CA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4244-3921-8
  • Electronic_ISBN
    1930-8841
  • Type

    conf

  • DOI
    10.1109/IRWS.2009.5383029
  • Filename
    5383029